PART |
Description |
Maker |
UPA1950 UPA1950TE UPA1950TE-T2 UPA1950TE-T1 |
2.5 A, 12 V, 0.205 ohm, 2 CHANNEL, P-CHANNEL, Si, POWER, MOSFET P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING Pch enhancement-type MOS FET
|
NEC[NEC]
|
UPA1873 UPA1873GR-9JG UPA1873GR-9JG-E1 UPA1873GR-9 |
N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING N沟道MOS场效应晶体管开 N-channel enhancement type MOS FET
|
NEC, Corp. NEC[NEC]
|
UPA1857 UPA1857GR-9JG UPA1857GR-9JG-E2 UPA1857GR-9 |
Nch enhancement type power MOS FET N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
|
NEC
|
UPA2750GR UPA2750GR-E2 UPA2750GR-E1 |
Nch enhancement-type MOS FET (Dual type) SWITCHING N-CHANNEL POWER MOSFET
|
NEC[NEC]
|
UPA1716 UPA1716G PA1716 UPA1716G-E1 UPA1716G-E2 |
Pch enhancement type power MOS FET SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE MOS Field Effect Transistor
|
NEC[NEC]
|
STW5NA100 5367 STH5NA100FI STH5NA100 |
OLD PRODUCT: NOT SUITABLE FOR NEW DESIGN-IN N - CHANNEL ENHANCEMENT MODE, POWER MOS TRANSISTORS N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS From old datasheet system N-Channel Enhancement Mode Power MOS Transistors(N沟道增强模式快速功率MOS晶体 N沟道增强模式功率MOS晶体管(不适用沟道增强模式快速功率马鞍山晶体管)
|
ST Microelectronics SGS Thomson Microelectronics STMICROELECTRONICS[STMicroelectronics] STMicroelectronics N.V.
|
2SK3366-Z-E1 2SK3366-Z-E2 |
N-channel enhancement type Po MOS FET
|
NEC
|
UPA1725G-E1 UPA1725G-E2 |
N-channel enhancement type power MOS FET
|
NEC
|
UPA2510 UPA2510TM UPA2510TM-E2 |
N-ch enhancement-type MOSFET P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
|
NEC
|
STH7NA100FI STW7NA100FI STW7NA100 5759 |
OLD PRODUCT: NOT SUITABLE FOR NEW DESIGN-IN From old datasheet system N-CHANNEL MOSFET N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS N-Channel Enhancement Mode Power MOS Transistors(N沟道增强模式功率MOS晶体 N沟道增强模式功率MOS晶体管(不适用沟道增强模式功率马鞍山晶体管
|
ST Microelectronics STMICROELECTRONICS[STMicroelectronics] 意法半导 TE Connectivity, Ltd.
|